Figures from "Structure and Bonding of Ordered Organic Monolayers of 1,5-Cyclooctadiene on the Si(100) Surface", by J.S. Hovis and R.J. Hamers, Journal of Physical Chemistry B, vol. 101, no. 46, pp. 9581-9585 (November 13, 1997)

Note: All the figures shown here have been published and copyrighted. If you use or reproduce any of these figures in any way, you must indicate the original source of the image. For electronic or paper publication, you must receive written permission from Robert Hamers and the American Chemical Society.

	Figure 1 Infrared absorption of 1,5-cyclooctadiene layer on Si(100) for s- and p-polarized light: (1a) definition of polarization directions; (1b) absorption spectra obtained with s- and p-polarized light, showing spectral regions corresponding to the Si-H and C-H stretching regions.
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Figure 2 STM images of Si(001) after exposure to 1,5-cyclooctadiene. (2a) Image obtained at low coverage showing individual COD molecules and the underlying dimerized Si(001) surface. Image obtained at sample voltage of -2.1 V and current of 200 pA. (2b) Height profile along the line indicated in (2a). (2c) STM image obtained after saturation exposure showing highly-ordered array of COD molecules on Si(001) surface. Image obtained at a sample voltage of -2.4 V and current of 200 pA. (2d) Magnified view of saturation-coverage surface showing apparent internal structure of molecules on the surface.

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	Figure 3 XPS spectrum of Si(100) after exposure to saturation coverage of 1,5-cyclooctadiene. Schematic depiction of incident electric field vector with respect to the Si(001) surface. Large dots denote experimental data, the solid line represents a fit to three Gaussian peaks as decribed in text, and dashed lines show the individual fit components.
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	Figure 4 Schematic structures for free and surface-bonded 1,5-cyclooctadiene: (4a) lowest-energy configuration of COD molecule; (4b) endo approach of COD to Si(001)surface; (4c) exo approach of COD to Si(001)surface; (4d) energy-minimized geometry of 1,5-cyclooctadiene on Si 9 cluster.
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