Figures from "Cycloaddition Chemistry on Silicon(001) Surfaces: The Adsorption of Azo-tert-butane", by Mark D. Ellison*, Jennifer S. Hovis, Hongbing Liu, and Robert J. Hamers, Journal of Physical Chemistry B, vol. 102 (43), pp. 8510 -8518 (1998).

Note: All the figures shown here have been published and copyrighted. If you use or reproduce any of these figures in any way, you must indicate the original source of the image. For electronic or paper publication, you must receive written permission from Robert Hamers and the American Chemical Society.

Figure 1

	FTIR spectrum of (a) 130 K Si(001) surface exposed to 20 L ATB, and (b) the same sample heated to 350 K after adsorption.
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	Figure 2 FTIR spectrum of a 300 K Si(001) surface exposed to 20 L ATB and then heated to 400 K and 580 K. The lower curve shows the absorbance after 300 K adsorption. The middle and upper curves show the absorbance after heating to 400 K and 580 K, respectively.
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	Figure 3 XPS spectrum of a 300 K Si(001) surface exposed to 20 L ATB. Panel (a) shows the N 1s region, and panel (b) shows the C 1s region. The assignment of the individual peaks is discussed in the text.
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	Figure 4 STM image of a 300 K Si(001) surface exposed to 0.1 L ATB. Two distinct features, A and B, are observed.
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	Figure 5 STM image of a room temperature Si(001) crystal exposed to 20 L ATB.
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	Figure 6 XPS spectrum of a 300 K Si(001) surface exposed to 20 L ATB and then heated to ~580 K. Panel (a) shows the N 1s region, and panel (b) shows the C 1s region.
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	Figure 7 The proposed binding configuration of ATB on Si(001) (a), and the result of a Gaussian 94 energy minimization calculation for this system (b).
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