CHARGE DYNAMICS AT THE SILICON(001) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY AND SURFACE PHOTOVOLTAGE

TitleCHARGE DYNAMICS AT THE SILICON(001) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY AND SURFACE PHOTOVOLTAGE
Publication TypeJournal Article
Year of Publication1992
AuthorsCahill, DG, Hamers, RJ
JournalScanning Microscopy
Volume6
Pagination931-936
Date PublishedDec
Type of ArticleArticle
ISBN Number0891-7035
Accession NumberISI:A1992KK54800006
Keywordsvicinal si(001)
Abstract

Scanning tunneling microscopy measurements of local surface photovoltage of the Si(001) surface reveal the existence of local charging produced by the tunneling current. Since the tunneling current is. confined to a region of near atomic dimensions, charge transport between surface and bulk electronic states is probed with high spatial resolution. The surface charge is enhanced while tunneling at the bonded, type-B atomic step and at specific point defects demonstrating atomic-scale variations in the charge dynamics.

URL<Go to ISI>://A1992KK54800006