Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

TitleBoron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study
Publication TypeJournal Article
Year of Publication2014
AuthorsKapilashrami, M, Conti, G, Zegkinoglou, I, Nemsak, S, Conlon, CS, Torndahl, T, Fjallstrom, V, Lischner, J, Louie, SG, Hamers, RJ, Zhang, L, Guo, JH, Fadley, CS, Himpsel, FJ
JournalJournal of Applied Physics
Volume116
Date PublishedOct
ISBN Number0021-8979
Keywordsaffinity, conduction, core exciton, diamond, energy, nanocrystalline, photoelectron-spectroscopy, precise determination, quasi-particle, solar-cells, surfaces
Abstract

Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se-2 (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO = VBMCIGS -VBMdiamond = 0.3 eV +/- 0.1 eV at the CIGS/Diamond interface and 0.0 eV +/- 0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum. (C) 2014 AIP Publishing LLC.

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