Hamers Group Publications

Export 282 results:
Author Title Type [ Year(Asc)]
1990
Demuth JE, Koehler U, Hamers RJ. SURFACE DIFFRACTOMETRY AND LATTICE IMAGING OF SCANNING TUNNELING MICROSCOPY IMAGES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films [Internet]. 1990;8:214-217. <Go to ISI>://A1990CL59400042
Hamers RJ, Markert K. SURFACE PHOTOVOLTAGE ON SI(111)-(7X7) PROBED BY OPTICALLY PUMPED SCANNING TUNNELING MICROSCOPY. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films [Internet]. 1990;8:3524-3530. <Go to ISI>://A1990DP52000086
Frenken JWM, Hamers RJ, Demuth JE. THERMAL ROUGHENING STUDIED BY SCANNING TUNNELING MICROSCOPY. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films [Internet]. 1990;8:293-296. <Go to ISI>://A1990CL59400061
Hamers RJ, Cahill DG. ULTRAFAST TIME RESOLUTION IN SCANNED PROBE MICROSCOPIES. Applied Physics Letters [Internet]. 1990;57:2031-2033. <Go to ISI>://A1990EG58700029
1989
Hamers RJ. ATOMIC-RESOLUTION SURFACE SPECTROSCOPY WITH THE SCANNING TUNNELING MICROSCOPE. Annual Review of Physical Chemistry [Internet]. 1989;40:531-559. <Go to ISI>://A1989AY22000019
Hamers RJ, Kohler UK. DETERMINATION OF THE LOCAL ELECTRONIC-STRUCTURE OF ATOMIC-SIZED DEFECTS ON SI(001) BY TUNNELING SPECTROSCOPY. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films [Internet]. 1989;7:2854-2859. <Go to ISI>://A1989AG67700062
Tsao JY, Chason E, Koehler U, Hamers R. DIMER STRINGS, ANISOTROPIC GROWTH, AND PERSISTENT LAYER-BY-LAYER EPITAXY. Physical Review B [Internet]. 1989;40:11951-11954. <Go to ISI>://A1989CE11400065
Manassen Y, Hamers RJ, Demuth JE, Castellano AJ. DIRECT OBSERVATION OF THE PRECESSION OF INDIVIDUAL PARAMAGNETIC SPINS ON OXIDIZED SILICON SURFACES. Physical Review Letters [Internet]. 1989;62:2531-2534. <Go to ISI>://A1989U666900028
Hamers RJ. EFFECTS OF COVERAGE ON THE GEOMETRY AND ELECTRONIC-STRUCTURE OF AL OVERLAYERS ON SI(111). Physical Review B [Internet]. 1989;40:1657-1671. <Go to ISI>://A1989AG98100028
Hamers R, Demuth JE. ELECTRONIC-STRUCTURE OF LOCALIZED SI DANGLING-BOND DEFECTS BY TUNNELING SPECTROSCOPY - REPLY. Physical Review Letters [Internet]. 1989;62:2424-2424. <Go to ISI>://A1989U545900025
Hamers RJ, Kohler UK, Demuth JE. NUCLEATION AND GROWTH OF EPITAXIAL SILICON ON SI(001) AND SI(111) SURFACES BY SCANNING TUNNELING MICROSCOPY. Ultramicroscopy [Internet]. 1989;31:10-19. <Go to ISI>://A1989AQ74300003
Demuth JE, Koehler UK, Hamers RJ, Kaplan P. PHASE-SEPARATION ON AN ATOMIC SCALE - THE FORMATION OF A NOVEL QUASIPERIODIC 2D-STRUCTURE. Physical Review Letters [Internet]. 1989;62:641-644. <Go to ISI>://A1989T105500009
Hamers RJ. Scanning tunneling microscopy. In: Chiarotti G. Physics of Solid Surfaces. Landolt-Bornstein; 1989.
Hamers RJ, Koch RH. Scanning tunneling microscopy and spectrosocpy of Si dangling bond defects. In: Helms CR. Physical and chemistry of SiO2 and the Si-SiO2 Interface. Plenum Press; 1989.
Kohler U, Demuth JE, Hamers RJ. SCANNING TUNNELING MICROSCOPY STUDY OF LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON ON SI(111)-(7X7). Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films [Internet]. 1989;7:2860-2867. <Go to ISI>://A1989AG67700063
Hamers RJ, Wynne Jj>. Time-resolved Tunneling Microscope. IBM Technical Disclosure Bulletin. 1989;31:350.
1988
Hamers RJ, Demuth JE. ATOMIC-STRUCTURE AND BONDING OF SI(111)-(SQUARE-ROOT-3XSQUARE-ROOT-3)AL. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films [Internet]. 1988;6:512-516. <Go to ISI>://A1988M650200080
Hamers RJ. CHARACTERIZATION OF LOCALIZED ATOMIC SURFACE-DEFECTS BY TUNNELING MICROSCOPY AND SPECTROSCOPY. Journal of Vacuum Science & Technology B [Internet]. 1988;6:1462-1467. <Go to ISI>://A1988P729100076
Hamers RJ, Houston PL, Merrill RP. COMPETITION BETWEEN DIRECT-INELASTIC AND TRAPPING DESORPTION CHANNELS IN THE SCATTERING OF NO (V=O,J) FROM IR(111). Journal of Chemical Physics [Internet]. 1988;88:6548-6555. <Go to ISI>://A1988N555800057
Hamers RJ, Demuth JE. ELECTRONIC-STRUCTURE OF LOCALIZED SI DANGLING-BOND DEFECTS BY TUNNELING SPECTROSCOPY. Physical Review Letters [Internet]. 1988;60:2527-2530. <Go to ISI>://A1988N799600022
Demuth JE, Vonlenen EJ, Tromp RM, Hamers RJ. LOCAL ELECTRONIC-STRUCTURE AND SURFACE GEOMETRY OF AG ON SI(111). Journal of Vacuum Science & Technology B [Internet]. 1988;6:18-26. <Go to ISI>://A1988M172300002
Tromp RM, Vanloenen EJ, Hamers RJ, Demuth JE. Scanning tunneling microscopy of semiconductor surfaces and interfaces. In The Structure of Surfaces II. 1988.
Hamers RJ, Avouris P, Bozso F. A SCANNING TUNNELING MICROSCOPY STUDY OF THE REACTION OF SI(001)-(2X1) WITH NH3. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films [Internet]. 1988;6:508-511. <Go to ISI>://A1988M650200079
Demuth JE, Koehler U, Hamers RJ. THE STM LEARNING-CURVE AND WHERE IT MAY TAKE US. Journal of Microscopy-Oxford [Internet]. 1988;152:299-316. <Go to ISI>://A1988U546700001
Kohler UK, Demuth JE, Hamers RJ. SURFACE RECONSTRUCTION AND THE NUCLEATION OF PALLADIUM SILICIDE ON SI(111). Physical Review Letters [Internet]. 1988;60:2499-2502. <Go to ISI>://A1988N799600015
Schneir J, Sonnenfeld R, Marti O, Hansma PK, Demuth JE, Hamers RJ. TUNNELING MICROSCOPY, LITHOGRAPHY, AND SURFACE-DIFFUSION ON AN EASILY PREPARED, ATOMICALLY FLAT GOLD SURFACE. Journal of Applied Physics [Internet]. 1988;63:717-721. <Go to ISI>://A1988L836200017
1987
Koch RH, Hamers RJ. CHARACTERIZATION OF ELECTRON TRAPPING DEFECTS ON SILICON BY SCANNING TUNNELING MICROSCOPY. Surface Science [Internet]. 1987;181:333-339. <Go to ISI>://A1987G720900039
Hamers RJ, Tromp RM, Demuth JE. ELECTRONIC AND GEOMETRIC STRUCTURE OF SI(111)-(7X7) AND SI(001) SURFACES. Surface Science [Internet]. 1987;181:346-355. <Go to ISI>://A1987G720900041
Hamers RJ, Avouris P, Bozso F. IMAGING OF CHEMICAL-BOND FORMATION WITH THE SCANNING TUNNELING MICROSCOPE - NH3 DISSOCIATION ON SI(001). Physical Review Letters [Internet]. 1987;59:2071-2074. <Go to ISI>://A1987K611000022
Vanloenen EJ, Demuth JE, Tromp RM, Hamers RJ. LOCAL ELECTRON-STATES AND SURFACE GEOMETRY OF SI(111)-(SQUARE-ROOT 3 X SQUARE-ROOT 3)AG. Physical Review Letters [Internet]. 1987;58:373-376. <Go to ISI>://A1987F688800023
Avouris P, Bozso F, Hamers RJ. THE REACTION OF SI(100) 2X1 WITH NO AND NH3 - THE ROLE OF SURFACE DANGLING BONDS. Journal of Vacuum Science & Technology B [Internet]. 1987;5:1387-1392. <Go to ISI>://A1987K494900015
Tromp R, Vanloenen EJ, Hamers RJ, Demuth JE. Scanning tunneling microscopy of semiconductor surfaces and interfaces. Second international conference on the structure of surfaces. 1987.
1986
Tromp RM, Hamers RJ, Demuth JE. ATOMIC AND ELECTRONIC CONTRIBUTIONS TO SI(111)-(7X7) SCANNING-TUNNELING-MICROSCOPY IMAGES. Physical Review B [Internet]. 1986;34:1388-1391. <Go to ISI>://A1986D348400126
Tromp RM, Hamers RJ, Demuth JE. QUANTUM STATES AND ATOMIC-STRUCTURE OF SILICON SURFACES. Science [Internet]. 1986;234:304-309. <Go to ISI>://A1986E304600028
Hamers RJ, Tromp RM, Demuth JE. SCANNING TUNNELING MICROSCOPY OF SI(001). Physical Review B [Internet]. 1986;34:5343-5357. <Go to ISI>://A1986E450200049
Demuth JE, Hamers RJ, Tromp RM, Welland ME. A SIMPLIFIED SCANNING TUNNELING MICROSCOPE FOR SURFACE SCIENCE STUDIES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films [Internet]. 1986;4:1320-1323. <Go to ISI>://A1986C819300062
Hamers RJ, Tromp RM, Demuth JE. SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE. Physical Review Letters [Internet]. 1986;56:1972-1975. <Go to ISI>://A1986C111400023
1982
Hamers RJ, Wietfeldt JR, Wright JC. DEFECT CHEMISTRY IN CAF2-EU3+. Journal of Chemical Physics [Internet]. 1982;77:683-692. <Go to ISI>://A1982NY11900013

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